Effects of Gas Velocity on Deposition Rate and Amount of Cluster Incorporation into a-Si:H Films Fabricated by SiH4 Plasma Chemical Vapor Deposition

Takashi KOJIMA; Susumu TOKO; Kazuma TANAKA; Hyunwoong SEO; Naho ITAGAKI; Kazunori KOGA; Masaharu SHIRATANI

doi:10.1585/pfr.13.1406082

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Effects of Gas Velocity on Deposition Rate and Amount of Cluster Incorporation into a-Si:H Films Fabricated by SiH₄Plasma Chemical Vapor Deposition

Takashi KOJIMA, Susumu TOKO, Kazuma TANAKA, Hyunwoong SEO, Naho ITAGAKI, Kazunori KOGA, Masaharu SHIRATANI

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Keywords: plasma CVD, cluster, a-Si:H, solar cell, laser light scattering, quartz crystal microbalance

JOURNAL FREE ACCESS

2018 Volume 13 Pages 1406082

DOI https://doi.org/10.1585/pfr.13.1406082

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Abstract

To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18 m/s, clusters are trapped between the multi-hollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

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