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Ultra-low-power neurotransmitter sensor using novel “click” chemistry aptamer-functionalized deep subthreshold Schottky barrier IGZO TFT

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Abstract

This report implements for the first time an alkyne-azide “click” chemistry to position dopamine-specific aptamer receptors on InGaZnO (IGZO) thin film transistor (TFT) surfaces for sensitive and selective detection of dopamine. It incorporates catalytic attachment of an alkyne-terminated silane to an azide-anchored aptamer that precludes the need of an intermediate molecular cross-linking bond. The TFTs demonstrate high-gain (~ 1000) Schottky action in deep subthreshold regime achieved through high-quality metal–semiconductor contact engineering which enables almost unity voltage operation. The aptamer is specifically synthesized for selectivity towards dopamine and volt-order-calibrated responses with empirical and theoretical detection limits of 1 nM and 100 pM are achieved.

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Acknowledgments

This work was supported by National Science Foundation (NSF) (Grant numbers CNS-1556301, SHF-1718428, and ECCS-1926465). A.B. would like to thank Hope Kumalki, Vamshi Kiran Gogi, Dr. Necati Kaval, Dr. Yao Wu, Dr. Melodie A. Fickenscher, and the ERC Cleanroom and staff at the University of Cincinnati for their help.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH, 45221, USA

    Abhijeet Barua, Ryan J. White & Rashmi Jha

  2. Department of Chemistry, University of Cincinnati, Cincinnati, OH, 45221, USA

    Ryan J. White

  3. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH, 45433, USA

    Kevin D. Leedy

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  1. Abhijeet Barua
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  2. Ryan J. White
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Correspondence to Abhijeet Barua or Rashmi Jha.

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Barua, A., White, R.J., Leedy, K.D. et al. Ultra-low-power neurotransmitter sensor using novel “click” chemistry aptamer-functionalized deep subthreshold Schottky barrier IGZO TFT. MRS Communications 11, 233–243 (2021). https://doi.org/10.1557/s43579-021-00028-w

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