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Peridynamic simulations of damage in indentation and scratching of 3C-SiC

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Abstract

The cubic silicon carbide (3C-SiC) has broad application prospects due to its excellent properties. The modeling of damage in 3C-SiC due to contact loads is important yet challenging. In this paper, simulations based on peridynamics theory are proposed to model damage of 3C-SiC in indentation and scratching. In indentation, the pop-in phenomenon of load-depth curve and initiation and propagation of cracks are observed. During scratching, the specific cutting energy (energy consumed per unit volume of material removed) increases nonlinearly with the decrease of scratching depth. Initiation and propagation of radical cracks on both sides of the groove are found. In addition, for scratching with double indenters, the volume of material removal is more than twice that of scratching with an indenter when indenter interval is less than the threshold. This paper demonstrates that peridynamics is a powerful tool to investigate damage in indentation and scratching of brittle materials.

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The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form part of an ongoing study.

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Funding

This work is supported by Beijing Natural Science Foundation (Nos. L212025 and 3202024), NSAF (No. U2130108), National Natural Science Foundation of China (No. 51875405), Tribology Science Fund of State Key Laboratory of Tribology in Advanced Equipment (No. SKLTKF20B13), and Beijing Institute of Technology Research Fund Program for Young Scholars.

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Authors and Affiliations

  1. School of Mechanical Engineering, Beijing Institute of Technology, Beijing, 100081, China

    Yimeng Xu & Pengzhe Zhu

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  1. Yimeng Xu
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  2. Pengzhe Zhu
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Contributions

YX contributed toward methodology, software, data curation, formal analysis, writing—original draft, and visualization. PZ contributed toward conceptualization, validation, resources, writing—review and editing, supervision, project administration, and funding acquisition.

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Correspondence to Pengzhe Zhu.

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Xu, Y., Zhu, P. Peridynamic simulations of damage in indentation and scratching of 3C-SiC. Journal of Materials Research 37, 4381–4391 (2022). https://doi.org/10.1557/s43578-022-00812-x

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