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Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices

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  • FOCUS ISSUE: Two-dimensional Materials for Future Generation Energy Storage Applications
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Abstract

Due to the growing popularity of wearable electronics, flexible memory devices are in great demand. The manufacturing method, materials synthesis, and device structure are key obstacles realize the deployable flexible memory devices. Herein, a single-step process of new and highly conductive porous laser-induced graphene (LIG) has been examined which offers higher electrical conductivity, porous structure and flexibility. Also, surface morphology, crystallinity, functional groups in LIG, and oxygen vacancies in MnO2 nanoparticles have been comprehensively studied for memristor. The, Ion/Ioff ratio of LIG and LIG/MnO2 was 9.15 and 6.8, respectively. The drop casting of MnO2 nanoparticles on LIG increases conductivity with oxygen vacancies, improving memristor behaviour of limited Ion/Ioff ratio. The LIG fluid-based memristor with MnO2 as a metal liquid has outstanding resistance switching capabilities. Moreover, the LIG has showed remarkable performance both substrate and active material for memristor in flexible, wearable, and fluid-based electronics applications.

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Authors and Affiliations

  1. MEMS, Microfluidics and Nanoelectronics Lab, Department of Electrical and Electronics Engineering, BITS-Pilani, Hyderabad Campus, Hyderabad, 500078, India

    Prasanth K. Enaganti, Avinash Kothuru & Sanket Goel

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  1. Prasanth K. Enaganti
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Correspondence to Sanket Goel.

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Enaganti, P.K., Kothuru, A. & Goel, S. Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices. Journal of Materials Research 37, 3976–3987 (2022). https://doi.org/10.1557/s43578-022-00590-6

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