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Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

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Abstract

We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and4He+ were used to produce displacement damage doses (D d) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase withD d and finally saturate after a sufficiently highD d. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E FS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning atE FS.

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Authors and Affiliations

  1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan & E. E. Haller

  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA

    S. X. Li, R. E. Jones & E. E. Haller

  3. Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, 14853, USA

    Hai Lu & William J. Schaff

  4. Air Force Research Laboratory, Kirtland Air Force Base, Kirtland AFB, NM, 87117, USA

    W. Kemp

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  1. S. X. Li
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  4. J. Wu
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Li, S.X., Yu, K.M., Jones, R.E. et al. Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN. MRS Online Proceedings Library 864, 710 (2004). https://doi.org/10.1557/PROC-864-E7.10

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  • DOI: https://doi.org/10.1557/PROC-864-E7.10

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