Abstract
Anisotropic nanostructuring of bulk silicon (Si) leads to a significant optical anisotropy of single porous silicon (PSi) layers. A variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in plane an in depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization sensitive, silicon-based optical devices: retarders, dichroic Bragg Reflectors, dichroic microcavities and Si based polarizers.
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J. Schilling, F. Müller, S. Matthias, R.B. Wehrspohn, U. Gösele, and K. Busch, Appl. Phys. Lett. 78, 1180 (2001).
A. G. Cullis, L. T. Canham and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
N. Künzner, D. Kovalev, J. Diener, E. Gross, V. Yu. Timoshenko, G. Polisski, F. Koch and M. Fujii Optics Letters 26, 1265 (2001).
D. Kovalev, G. Polisski, J. Diener, H. Heckler, N. Künzner, V. Yu. Timoshenko, F. Koch, Appl. Phys. Lett. 78, 916(2001)
D. Kovalev, G. Polisski, J. Diener, H. Heckler, N. Künzner, F. Koch Phys. Stat. Sol.(a) 180, r8–r11 (2000)
J. Diener, N. Künzner, D. Kovalev, E. Gross, V. Yu. Timoshenko, G. Polisski and F. Koch, Appl. Phys. Lett. 78, 3887 (2001)
J. Diener, N. Künzner, D. Kovalev, E. Gross, F. Koch, J. of Appl. Phys. 91, 6704 (2002).
J. Diener, N. Künzner, E. Gross, D. Kovalev, M. Fujii, Optics Letters accepted for publication
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Diener, J., Künzner, N., Gross, E. et al. Optical devices based on anisotropically nanostructured silicon. MRS Online Proceedings Library 797, 25–30 (2003). https://doi.org/10.1557/PROC-797-W1.8
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DOI: https://doi.org/10.1557/PROC-797-W1.8