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The Dynamics of Cadmium Telluride Etching

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Abstract

CdTe etching was investigated using variable angle spectroscopic ellipsometry and glancing angle x-ray diffraction. Treatment with HNO3:H3PO4 (NP) based etches was shown to form amorphous-Te surface films which spontaneously crystallize following etching. Br2/methanol (BM) etching forms very thin amorphous-Te films. NP-etched surfaces are stable in ambient air for ∼1 hr before beginning to oxidize, while BM etched films oxidize immediately following treatment. CdTe grain boundary etching by NP was minimized using more acidic etches. Device analysis suggests that a higher Te content produces more stable back contacts by attenuating Cu diffusion. Mechanistic details of NP etching are discussed.

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Authors and Affiliations

  1. Institute of Energy Conversion, University of Delaware, 19716, Newark, DE, USA

    K. D. Dobson, P. D. Paulson, B. E. McCandless & R. W. Birkmire

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  1. K. D. Dobson
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  2. P. D. Paulson
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  3. B. E. McCandless
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  4. R. W. Birkmire
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Dobson, K.D., Paulson, P.D., McCandless, B.E. et al. The Dynamics of Cadmium Telluride Etching. MRS Online Proceedings Library 763, 31 (2002). https://doi.org/10.1557/PROC-763-B3.1

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  • DOI: https://doi.org/10.1557/PROC-763-B3.1

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