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Optical Characterization of Bulk GaN Grown from a Na/Ga Flux

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Abstract

Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

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Authors and Affiliations

  1. Dept of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, 85287-5706, Tempe, AZ, U.S.A.

    K. Palle, L. Chen, H. X. Liu & B. J. Skromme

  2. Institute for Advanced Materials Processing, Tohoku University, 980-8577, Sendai, Japan

    H. Yamane & M. Aoki

  3. Dept of Chemistry and Chemical Biology, Cornell University, 14853, Ithaca, NY, U.S.A.

    C. B. Hoffman & F. J. Di Salvo

Authors
  1. K. Palle
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  2. L. Chen
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  3. H. X. Liu
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  4. B. J. Skromme
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  5. H. Yamane
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  6. M. Aoki
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  7. C. B. Hoffman
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  8. F. J. Di Salvo
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Palle, K., Chen, L., Liu, H.X. et al. Optical Characterization of Bulk GaN Grown from a Na/Ga Flux. MRS Online Proceedings Library 743, 336 (2002). https://doi.org/10.1557/PROC-743-L3.36

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  • DOI: https://doi.org/10.1557/PROC-743-L3.36

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