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On the Origin of Light Emission in GaNxP1-x

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Abstract

Temperature dependent photoluminescence (PL) and absorption measurements are employed to clarify mechanism for light emission in GaNP alloys with low (< 4.1) nitrogen content. The PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent red shift of the PL maximum position. On the other hand, band-to-band recombination in the alloy remains predominantly non-radiative presumably due to the presence of a large number of competing recombination channels.

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Authors and Affiliations

  1. Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden

    I. A. Buyanova, G. Yu. Rudko & W. M. Chen

  2. Department of Electrical and Computer Engineering, University of California, La Jolla, CA, 92093-0407, USA

    H. P. Xin & C. W. Tu

Authors
  1. I. A. Buyanova
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  2. G. Yu. Rudko
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  3. W. M. Chen
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  4. H. P. Xin
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  5. C. W. Tu
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Buyanova, I.A., Rudko, G.Y., Chen, W.M. et al. On the Origin of Light Emission in GaNxP1-x . MRS Online Proceedings Library 722, 42 (2002). https://doi.org/10.1557/PROC-722-K4.2

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  • DOI: https://doi.org/10.1557/PROC-722-K4.2

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