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The Role of Nitrogen-Induced Localization and Defects in InGaAsN (≈ 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

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Abstract

Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, NM, 87185-0601, USA

    Steven R. Kurtz, A. A. Allerman, J. F. Klem, R. M. Sieg, C. H. Seager & E. D. Jones

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  1. Steven R. Kurtz
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  2. A. A. Allerman
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  3. J. F. Klem
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  4. R. M. Sieg
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  5. C. H. Seager
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  6. E. D. Jones
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Kurtz, S.R., Allerman, A.A., Klem, J.F. et al. The Role of Nitrogen-Induced Localization and Defects in InGaAsN (≈ 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition. MRS Online Proceedings Library 692, 171 (2001). https://doi.org/10.1557/PROC-692-H1.7.1

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  • DOI: https://doi.org/10.1557/PROC-692-H1.7.1

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