Abstract
The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and the structural properties of these films are studied. Luminescence and electron spin resonance (ESR) spectra of GaN and GaN-Mn thin films are obtained. A correlation between cathodo-luminescence intensity and conductivity of GaN films is found. The nature of emission centers in GaN and GaN-Mn thin films is discussed and a mechanism of luminescence in these films is proposed.
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Bondar, V.D., Felter, T.E., Hunt, C.E. et al. Synthesis and Luminescent Properties of GaN and GaN-Mn Blue Nanocrystalline Thin-Film Phosphor for FED. MRS Online Proceedings Library 685, 1711 (2001). https://doi.org/10.1557/PROC-685-D17.1.1
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DOI: https://doi.org/10.1557/PROC-685-D17.1.1