Abstract
Using classical molecular-dynamics simulations, we worked out a simple model of Ion Beam Assisted Deposition (IBAD) of silicon dioxide on an amorphous silica substrate, in view to in- vestigate the modifications of the structural and vibrational properties induced by medium-energy bombardment. Atoms are assumed to interact via the two- and three-body potential developed by Nakano et al.[1]. Analysis of the films grown with increasing ratio, R, of medium-(30 eV) to low- (1 eV) kinetic energy SiO2 particles shows that the density rises rapidly, from 1.3 g/cm3 for R =0 to about 2.3 g/cm3 for R = 0.7. This effect can be associated primarily with structural changes occurring at an intermediate length scale (4-10 Å), as it manifests itself by changes in the so-called first sharp diffraction peak (FSDP), the finger-print of medium range order (MRO) in a-SiO2 glass [2, 3]. We found also that the densification results in a significant decrease of the number of “soft” vibrational modes, occurring in the 0.5-3.5 THz frequency range.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Nakano, L. Bi, R. Kalia, and P. Vashishta, Phys. Rev. B 49, 9441 (1994).
S. C. Moss and D. L. Price, in Physics of disordered materials, edited by D. Adler, H. Fritzsche, and S. R. Ovshinsky (Plenum New-York, 1985), 77.
A. Nakano, R. Kalia, and P. Vashishta, J. Non-Cryst. Solids 171, 157 (1994).
L. Martinu and D. Poitras, J. Vac. Sci. Tech. A 18, 2627 (2000).
H. K. Pulker, Surf. Coat. Technol. 112, 250 (1999).
Handbook of plasma processing technology, edited by S. M. Rossnagel, J. J. Cuomo and W. D. Westwood, (Noyes Publications Park Ridge, 1990).
P. Vashishta, R. Kalia, A. Nakano, W. Li, and I. Ebbsjö, in Amorphous Insulators and Semiconductors, edited by M. F. Thorpe and M. I. Mitkova, (Kluwer Dordrecht, 1997), 151.
C. F. George and P. D’Antonio, J. Non-Cryst. Solids 34, 323 (1979).
A. H. Al-Bayati, S. S. Todorov, K. J. Boyd, D. Marton, J. W. Rabalais and J. Kulik, J. Vac. Sci. Technol. B 13, 1639 (1995).
N. Mousseau, G. T. Barkema, and S. de Leeuw, J. Chem. Phys. 112, 960 (2000).
J. R. McNeil, A. C. Barron, S. R. Wilson, and W. C. Hermann Jr., Appl. Opt. 23, 552 (1984).
A. Brunet-Bruneau, D. Souche, S. Fisson, V. Nguyen Van, G. Vuye, F. Abeles, and J. Rivory J. Vac. Sci. Technol. A 16, 2281 (1998); A. Brunet-Bruneau, J. Rivory, B. Rafin, J. Y. Robic, and P. Chaton, J. Appl. Phys. 82, 1330 (1997).
R. Smith, M. Jakas, D. Ashworth, B. Oven, M. Bowyer, I. Chakarov, and R. Webb, in Atomic and ion collisions in solids and at surfaces, edited by R. Smith (Cambridge University Press Cambridge, 1997), 247.
T. Campbell, R. Kalia, A. Nakano, F. Shimojo, K. Tsuruta, P. Vashishta, and S. Ogata, Phys. Rev. Lett. 82, 4018 (1999).
B. Himmel, T. Gerber, and H. G. Neumann, Phys. Stat. Sol. A 88, K127 (1985).
D. Caprion, P. Jund, J. P. Bonnet and R. Jullien, J. Non-Cryst. Solids, 232-234, 459 (1998).
F. Terki, C. Levelut, M. Boissier, and J. Pelous, Phys. Rev. B, 53, 2411 (1996).
S. Sugai and A. Onodera, Phys. Rev. Lett. 77, 4210 (1996).
P. Jund and R. Jullien, J. Chem. Phys. 113, 2768 (2000).
J. Rino, I. Ebbsjö, R. Kalia, A. Nakano, and P. Vashishta, Phys. Rev. B 47, 3053 (1993).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lefèvre, A., Lewis, L.J., Martinu, L. et al. Structural and vibrational properties of silicon dioxide thin films densified by medium-energy particles bombardment. MRS Online Proceedings Library 677, 421 (2001). https://doi.org/10.1557/PROC-677-AA4.21
Published:
DOI: https://doi.org/10.1557/PROC-677-AA4.21