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Effect of substitutional doping on the thermal conductivity of Ti-based Half-Heusler compounds

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Abstract

Half-Heusler alloys with the general formula TiNiSn1-XSbX are currently being investigated for their potential as thermoelectric (TE) materials.1,2,3,4 These materials exhibit high thermopower (40-250μV/K) and low electrical resistivity values (0.1 - 8mΩ-cm) which yields a relatively large power factor (α2σT) of (0.2 - 1.0) W/m♦K at room temperature. The challenge is to reduce the relatively high thermal conductivity (≈ 10 W/m♦K) that is evident in these materials. The focus of this research is to investigate the effect of Sb-doping on the Sn site and Zr doping on the Ti site on the thermal conductivity of TiNiSn. Highly doped half-Heusler alloys have shown marked reduction in thermal conductivity to values on the order of 3.5 - 4.5 W/m♦K. Systematic determination of thermal conductivity in a variety of these doped materials as well as Sb and Zr doped TiNiSn are presented and discussed.

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Authors and Affiliations

  1. Department of Physics and Astronomy, Clemson University, Clemson, SC, USA

    S. Bhattacharya, A. L. Pope, R. T. Littleton IV & T. M. Tritt

  2. Department of Physics, University of Virginia, Charlottesville, VA, USA

    V. Ponnambalam, Y. Xia & S. J. Poon

Authors
  1. S. Bhattacharya
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  2. V. Ponnambalam
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  3. A. L. Pope
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  4. Y. Xia
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  5. S. J. Poon
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  6. R. T. Littleton IV
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  7. T. M. Tritt
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Bhattacharya, S., Ponnambalam, V., Pope, A.L. et al. Effect of substitutional doping on the thermal conductivity of Ti-based Half-Heusler compounds. MRS Online Proceedings Library 626, 52 (2000). https://doi.org/10.1557/PROC-626-Z5.2

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  • DOI: https://doi.org/10.1557/PROC-626-Z5.2

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