Skip to main content
Log in

Electrical transport of an AlGaN/GaN two-dimensional electron gas

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

An AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm-2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10-12 s.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. O. Aktas, Z. F. Fan, S. N. Mohammed, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 69, 3872, (1996).

    Article  CAS  Google Scholar 

  2. U.K. Mishra, Y.-F. Wu, B.P. Keller, S. Keller and S.P. DenBaars, IEEE Trans. on Microwave Theory and Tech., 46, 756, (1998).

    Article  CAS  Google Scholar 

  3. L. McCarthy, P. Kozodoy, M. Rodwell, S. DenBaars, and U. Mishra, Compound Semiconductor 4(8), 16 (1998).

    Google Scholar 

  4. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433, (1996).

    Article  CAS  Google Scholar 

  5. S. Nakamura, M. Seno, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 4056, (1996).

    Article  CAS  Google Scholar 

  6. S. Elhamri, R. S. Newrock, D. B. Mast, M. Ahoujja, W. C. Mitchel, J. M. Redwing, M. A. Tischler, and J. S. Flynn, Phys. Rev. B 57, 1374, (1998).

    Article  CAS  Google Scholar 

  7. L. W. Wong, S. J. Cai, R. Li, K. Wang, H. W. Jiang, and M. Chen, Appl. Phys. Lett. 73, 1391, (1998).

    Article  CAS  Google Scholar 

  8. J. S. Im, A. Moritz, F. Steuber, V. Härle, F. Scolz, and A. Hangleiter, Appl. Phys. Lett. 70, 631, (1997).

    Article  CAS  Google Scholar 

  9. S. W. King, C. Ronning, R. F. Davis, M. C. Benjamin, and R. J. Nemanich, J. Appl. Phys. 84, 2086, (1998).

    Article  CAS  Google Scholar 

  10. C.R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, and J.S. Speck, Appl. Phys. Lett. 74, 3528, (1999).

    Article  CAS  Google Scholar 

  11. J. S. Kim, D. G. Seiler, and W. F. Tseng, J. Appl. Phys. 73, 8324, (1993).

    Article  CAS  Google Scholar 

  12. I. Vurgaftman, J. R. Meyer, C. A. Hoffman, D. Redfern, J. Antoszewski, L. Faraone, and J. R. Lindemuth, J. Appl. Phys. 84, 4966, (1998).

    Article  CAS  Google Scholar 

  13. P. T. Coleridge, R. Stoner, and R. Fletcher, Phys. Rev. B 39, 1120 (1989)

    Article  CAS  Google Scholar 

  14. A. Isihara and L. Smrcka, J. Phys. C 19, 6777, (1986).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Saxler, A., Debray, P., Perrin, R. et al. Electrical transport of an AlGaN/GaN two-dimensional electron gas. MRS Online Proceedings Library 595, 1110 (1999). https://doi.org/10.1557/PROC-595-F99W11.10

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-595-F99W11.10

Navigation