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Optical Absorption Probability for the Zone-Folding Induced Quasi-Direct Gap in Ge(x)Si(1−x)/Si Strained Layer Superlattices

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Abstract

Using a realistic zone-folding scheme for a Ge(x)Si(1−x)/Si strained layer superlattice having a Si-like conduction band structure (i.e ≲85% Ge) we calculate the transition probability for the zone-folding induced direct optical gap and compare it with the indirect band gap absorption probability. The results suggest that such zone-folding induced direct optical transitions are promising for optical devices made from Ge(x)Si(1−x)/Si strained layer superlattices and like structures, provided they are fabricated in such a way that the appropriate zone-folding occurs.

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References

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Authors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, New Jersey, 07974, USA

    S. A. Jackson & R. People

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  1. S. A. Jackson
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  2. R. People
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Jackson, S.A., People, R. Optical Absorption Probability for the Zone-Folding Induced Quasi-Direct Gap in Ge(x)Si(1−x)/Si Strained Layer Superlattices. MRS Online Proceedings Library 56, 365–370 (1985). https://doi.org/10.1557/PROC-56-365

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  • DOI: https://doi.org/10.1557/PROC-56-365

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