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Depth and Time Dependence of Polystyrene Chain Diffusion Near the Polystyrene/Silicon Interface

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Abstract

We report on the results for the diffusion coefficient (D*) of polystyrene (PS) chains near the PS/Silicon interface. The present study employs secondary ion mass spectrometry (SIMS) to examine diffusion from a deuterated marker layer in thin PS films on silicon. The observed SIMS depth profiles are fit to numerical simulations of the diffusion process. The best fit is obtained for a super-linear dependence of D* vs. distance from the silicon wall. A non-trivial time dependence extending over tens of hours is observed for all the models tested.

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Authors and Affiliations

  1. Dept. of Physics, Queens College of CUNY, Flushing, NY, 11367, USA

    Y. Trzhemechny, V. Hapovalov, K. G. Hou & S. A. Chwarz

  2. Dept. of Materials Sci. & Eng., SUNY at Stony Brook, Stony Brook, NY, 11974, USA

    J. Sokolov & M. H. Rafailovich

Authors
  1. Y. Trzhemechny
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  2. V. Hapovalov
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  3. K. G. Hou
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  4. S. A. Chwarz
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  5. J. Sokolov
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  6. M. H. Rafailovich
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Trzhemechny, Y., Hapovalov, V., Hou, K.G. et al. Depth and Time Dependence of Polystyrene Chain Diffusion Near the Polystyrene/Silicon Interface. MRS Online Proceedings Library 543, 151–156 (1998). https://doi.org/10.1557/PROC-543-151

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  • DOI: https://doi.org/10.1557/PROC-543-151

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