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Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission

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Abstract

Optical absorption measurements have been performed to study the effect of carbon on the valence band offset of compressively strained p+ Si1−x−yGexCy/(100) p− Si heterojunction internal photoemission structures grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) with substitutional carbon levels up to 2.5%. Results indicated that carbon decreased the valence band offset by 26 ± 1 meV/ %C. Results from optical measurement in this study agreed with previous data from capacitance-voltage measurements. Based on previous reports of carbon effect on the bandgap of compressively strained Si1−x−yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of Si1−x−yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment.

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References

  1. K. Eberl, S. S. Iyer, S. Zollner, J. C. Tsang, and F. K. LeGous, Appl. Phys. Lett60, 3033 (1992).

    Article  CAS  Google Scholar 

  2. J. L. Regolini, F. Gisbert, G. Dolino, and P. Boucaud, Mat. Lett18, 57 (1993).

    Article  CAS  Google Scholar 

  3. H. J. Osten, H. Rucker, M. Methfessel, E. Bugiel, S. Ruminov, and G. Lippert, J. Cryst Growth157, 405 (1995).

    Article  CAS  Google Scholar 

  4. P. Boucaud, C. Guedj, F. H. Julien, E. Finkman, S. Bodnar, and J. L. Regolini, Thin Solid Films278, 114 (1996).

    Article  CAS  Google Scholar 

  5. J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, and K. M. Unruh, J. Cryst. Growth157, 386 (1995).

    Article  CAS  Google Scholar 

  6. C. W. Liu, A. St. Amour, J. C. Sturm, Y. R. J. Lacroix, M. L. W. Thewalt, C. W. Magee, and D. Eaglesham, J. Appl. Phys.80, 3043 (1996).

    Article  Google Scholar 

  7. C. L. Chang, A. St. Amour, and J. C. Sturm, Appl. Phys. Lett70, 1557 (1997).

    Article  CAS  Google Scholar 

  8. K. Brunner K. Eberl, and W. Winter, Phys. Rev. Lett.76, 303, (1996).

    Article  CAS  Google Scholar 

  9. A. St. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, and M. L. W. Thewalt, Appl. Phys. Lett67, 3915 (1995).

    Article  Google Scholar 

  10. L. D. Lanzerotti, A.St. Amour, C. W. Liu, and J. C. Sturm, Elec. Dev. Lett, 17, 334 (1996).

    Article  CAS  Google Scholar 

  11. P. Boucaud, C. Francis, F. Julien, J. Lourtioz, D. Bouchier, S. Bodnar, B. Lambert, and J. Regolini, Appl. Phys. Lett64, 875(1994).

    Article  CAS  Google Scholar 

  12. K. Brunner, W. Winter, and K. Eberl, Appl. Phys. Lett69, 1279 (1996).

    Article  CAS  Google Scholar 

  13. C. L. Chang, A. St. Amour, L. Lanzerotti, and J. C. Sturm, Mat. Res. Soc. Sym. Proc.402, 437 (1995)

    Article  Google Scholar 

  14. K. Rim, S. Takagi, J. J. Welser, J. L. Hoyt, and J. F. Gibbons, Mat. Res. Soc. Sym. Proc., 379, 327, (1995).

    Article  CAS  Google Scholar 

  15. Eberl, K. Brunner, and W. Winter, European Mat. Res. Soc. Spr Mtg, Strasbourg, France (1996)

    Google Scholar 

  16. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, C. C. Ahn, Appl. Phys. Lett., 70, 3413 (1997).

    Article  CAS  Google Scholar 

  17. C. L. Chang, S. P. Shukla, W. Pan, V. Venkataraman, J. C. Sturm, and M. Shayegan, 7thInternational MBE Symposium, Banff, Canada, (1997). Also to appear in Thin Sloid Films.

    Google Scholar 

  18. M. Kim and H. J. Osten, APL, 70, 2702 (1997).

    CAS  Google Scholar 

  19. J. Kolodzey et al, European Mat. Res. Soc. Spr Mtg, Strasbourg, France (1996)

    Google Scholar 

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Authors and Affiliations

  1. Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ, 08544, USA

    C. L. Chang, L. P. Rokhinson & J. C. Sturm

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  1. C. L. Chang
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  2. L. P. Rokhinson
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  3. J. C. Sturm
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Correspondence to C. L. Chang.

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Chang, C.L., Rokhinson, L.P. & Sturm, J.C. Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission. MRS Online Proceedings Library 533, 245–250 (1998). https://doi.org/10.1557/PROC-533-245

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