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Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

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Abstract

Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

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Acknowledgments

We are indebted to Alice Mason of NREL for the measurements of sulfur concentration by wavelength dispersive x-ray spectroscopy. The financial support of the National Renewable Energy Laboratory through subcontract number ZAX-4-14013-01 is also gratefully acknowledged.

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Authors and Affiliations

  1. Dept. of Physics and Astronomy, Univ. of Toledo, Toledo, OH, 43606, USA

    A. D. Compaan, Z. Feng, G. Contreras-Puente, C. Narayanswamy & A. Fischer

  2. E.S.F.M.-I.P.N, 07738, Mexico D.F., Mexico

    C. Narayanswamy

Authors
  1. A. D. Compaan
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  2. Z. Feng
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  3. G. Contreras-Puente
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  4. C. Narayanswamy
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  5. A. Fischer
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Corresponding author

Correspondence to A. D. Compaan.

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Compaan, A.D., Feng, Z., Contreras-Puente, G. et al. Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass. MRS Online Proceedings Library 426, 367–371 (1996). https://doi.org/10.1557/PROC-426-367

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  • DOI: https://doi.org/10.1557/PROC-426-367

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