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The Electric Field Measuring by Phase Selective Photoreflectance

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Abstract

The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ±0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.

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Acknowledgments

This work was supported by National Science Council of the Republic of China under Contract No. NCS 85-2112-M-006-014.

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Authors and Affiliations

  1. Department of physics, National Cheng Kung University, Tainan, Taiwan, China

    J. S. Hwang, W. Y. Chou, S. L. Tyan & Y. C. Wang

  2. U.S. Army Research Laboratory, Physical Science Directorate, AMSRL-PS-PB, Fort Monmouth, New Jersey, 07703-5601, USA

    H. Shen

  3. Department of Physics and Chemistry, Chinese Military Academy, Fengshan, Taiwan, China

    Y. C. Wang

Authors
  1. J. S. Hwang
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  2. W. Y. Chou
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  3. S. L. Tyan
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  4. Y. C. Wang
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  5. H. Shen
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Hwang, J.S., Chou, W.Y., Tyan, S.L. et al. The Electric Field Measuring by Phase Selective Photoreflectance. MRS Online Proceedings Library 421, 275–280 (1996). https://doi.org/10.1557/PROC-421-275

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  • DOI: https://doi.org/10.1557/PROC-421-275

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