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Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods

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Abstract

Ga0.54In0.46As0.12P0.88 lattice matched to GaAs and grown by metal organic vapor phase epitaxy (MOVPE) shows an anomalous temperature behaviour of its cathodoluminescence (CL) emission. Using high resolution x-ray diffraction (HRXRD) and transmission electron diffraction (TED), ordering in this quarternary alloy can be identified as the reason for this behaviour. The ordering follows the same trends with respect to misorientation that are known for InGaP. In addition to ordering, compositional fluctuations related to a miscibility gap are found in this material. In contrast, layers with a higher As-content (y=0.5; y=0.76) do not show properties related to ordering.

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Acknowledgments

The authors are thankful to A. Klein and I. Purann for the preparation of TEM cross-section samples and to U. Zeimer for the EPMA analysis. This work was funded by the Federal Ministry of Education, Science, Research and Technology (BMFT) under contract 13 N 6375.

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Authors and Affiliations

  1. Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489, Berlin, Germany

    I. Rechenberg, A. Oster, A. Knauer & M. Weyers

  2. Labor für Elektronenmikroskopie e.V., Weinbergweg 23, D-06120, Halle/Saale, Germany

    U. Richter

  3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5, D-10117, Berlin, Germany

    J. Menniger

Authors
  1. I. Rechenberg
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  2. A. Oster
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  3. A. Knauer
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  4. U. Richter
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  5. J. Menniger
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  6. M. Weyers
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Correspondence to I. Rechenberg.

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Rechenberg, I., Oster, A., Knauer, A. et al. Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods. MRS Online Proceedings Library 417, 49–54 (1995). https://doi.org/10.1557/PROC-417-49

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  • DOI: https://doi.org/10.1557/PROC-417-49

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