Abstract
We have studied laser-CVD of W on GaAs by X-ray Photoelectron Spectroscopy (XPS). Deposition of W is obtained by irradiating GaAs samples with a KrF excimer laser at normal incidence to the substrate, in a cell containing WF6 mixed with H2 and Ar. We have previously shown that WF6 and GaAs react at room temperature even without laser illumination. GaF3 formation and a loss of As were detected at the surface of the samples by XPS. At laser fluences of 50mJ/cm2, this reaction appears to be enhanced by laser heating of the substrate, but no metallic W is formed. At laser fluences of 67 mJ/cm2, metallic W begins to be deposited, through a pyrolytic dissociation reaction with the substrate.
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Acknowledgement
One of us (M.T.) would like to thank the Programme de Bourses de la Francophonie for financial assistance. The authors would like to acknowledge the financial support of the Fonds FCAR of Qu6bec and of NSERC of Canada. We also thank Dr. Edward Sacher, Dr. Alain Jean and Mrs Suzie Poulin for valuable discussions, Miss Corinne Pdpin for her help during the mounting of the W LCVD cell and Mr.Jean-Paul Lévesque for his technical assistance.
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Tabbal, M., Izquierdo, R., Meunier, M. et al. Surface Interaction Between Wf6 and GaAs Under UV Laser Illumination. MRS Online Proceedings Library 282, 191–196 (1992). https://doi.org/10.1557/PROC-282-191
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DOI: https://doi.org/10.1557/PROC-282-191