Abstract
Dynamical X-ray diffraction studies have been carried out for lattice-matched InGaAs/InP superlattices grown by modified molecular beam epitaxy (MBE) techniques. The (400) X-ray satellite pattern, which is predominantly affected by the strain modulation, was analyzed. The strain and thickness of the actual layers including the presence of strained interfacial regions were determined.
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J. M. Vandenberg, M. B. Panish, H. Temkin, and R. A. Hamm, Appl. Phys. Lett. 53, 1920 (1988).
M. H. Lyons, E. G. Scott, and M. A. G. Halliwell, in Microscopy of Semiconducting Materials, Institute of Physics Conference Series 100, Oxford, 1989, edited by A. G. Cullis and J. L. Hutchinson (IOP, Bristol, 1989), Sec. 6, p. 473.
J. C. P. Chang, T. P. Chin, K. L. Kavanagh, and C. W. Tu, Appl. Phys. Lett. 55, 1530 (1991).
J. M. Vandenberg, A. T. Macrander, R. A. Hamm and M. B. Panish, Phys. Rev. B44, 3991 (1991).
A. T. Macrander, E. R. Minami, and D. W. Berreman, J. Appl. Phys. 60, 1364 (1986).
W. J. Bartels, in Thin-Film Growth Techniques for Low-Dimensional Structures, Vol. 163 of NATO Advanced Study Institute, Series B: Physics, edited by R. F. C. Farrow and P. J. Dobson (Plenum, New York, 1987).
J. M. Vandenberg, D. Gershoni, R. A. Hamm, M. P. Panish, and H. Temkin, J. Appl. Phys. 66, 3635 (1989).
P. F. Fewster, Phillips J. Res. 41, 268 (1986).
D. Ritter, R. A. Hamm, M. B. Panish, J. M. Vandenberg, D. Gershoni, S. D. Gunapala, and B. F. Levine, Appl. Phys. Lett. 59, 552 (1991).
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Vandenberg, J.M., Chu, S.N.G., Hamm, R.A. et al. Dynamical X-Ray Diffraction Studies of Interfacial Strain in Superlattices Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 240, 141–145 (1991). https://doi.org/10.1557/PROC-240-141
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DOI: https://doi.org/10.1557/PROC-240-141