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Growth of Cu-rich/poor CuInS2 thin films by the sequential modulated flux deposition technique

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Abstract

CuInS2 has emerged during recent years as a good candidate to substitute CuInSe2 as polycrystalline absorber in thin film solar cells, mainly due to its direct band gap energy of 1.5 eV. In this study, absorber layers of both Cu-rich and Cu-poor types have been grown on soda-lime glass substrates by proper selection of the deposition parameters. The morphology and the optical properties of the resulting CuInS2 films were studied in dependence of the deposition order of the elemental constituents: alternate evaporation of the precursors, simultaneous deposition of the three constituents and sequential modulation of the evaporation fluxes.

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Authors and Affiliations

  1. Dep. of Energy, CIEMAT, Av. Complutense 22, Madrid, 28040, Spain

    A. Bollero, J. F. Trigo, J. Herrero & M. T. Gutiérrez

  2. Dep. of Materials Science, Tallinn University of Technology (TUT), Ehitajate tee 5, Tallinn, 19086, Estonia

    M. Grossberg & T. Raadik

Authors
  1. A. Bollero
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  2. M. Grossberg
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  3. T. Raadik
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  4. J. F. Trigo
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  5. J. Herrero
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  6. M. T. Gutiérrez
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Correspondence to A. Bollero.

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Bollero, A., Grossberg, M., Raadik, T. et al. Growth of Cu-rich/poor CuInS2 thin films by the sequential modulated flux deposition technique. MRS Online Proceedings Library 1165, 206 (2009). https://doi.org/10.1557/PROC-1165-M02-06

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  • DOI: https://doi.org/10.1557/PROC-1165-M02-06

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