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Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

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Abstract

Thermally grown SiO2 was implanted at room temperature with 220keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to obtain a comprehensive characterization of defects (vacancies, interstitital, bubbles, and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM are a consequence of the interaction between Kr and vacancies (V), with VnKrm complexes created in the entire of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strong desorption of Kr and the decrease in vacancy concentration.

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Authors and Affiliations

  1. CERI-CNRS, 3A, rue de la Férollerie, 45071, Orléans, France

    Hannan Assaf, Esidor Ntsoenzok, Marie-France Barthe & Elisa Leoni

  2. CSNSM, CNRS-IN2P3, Batiment 108 - Université Paris Sud XI, 91405, Orsay, France

    Marie-Odile Ruault

  3. Department of Engineering Science and Mechanics, The Pennsylvania State University, 212 Earth and Engineering Science Building, 16802, University Park, PA, USA

    S. Ashok

Authors
  1. Hannan Assaf
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  2. Esidor Ntsoenzok
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  3. Marie-France Barthe
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  4. Elisa Leoni
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  5. Marie-Odile Ruault
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  6. S. Ashok
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Assaf, H., Ntsoenzok, E., Barthe, MF. et al. Anomalous Evolution of Bubbles in Krypton-Implanted SiO2. MRS Online Proceedings Library 994, 09940604 (2006). https://doi.org/10.1557/PROC-0994-F06-04

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  • DOI: https://doi.org/10.1557/PROC-0994-F06-04

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