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Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure

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Abstract

We use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the [111] direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.

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Acknowledgments

We acknowledge the support of the NSF through DMR-1105362, 1105121 and ECCS-1100489, and the Australian Research Council. The Australian National Fabrication Facility is acknowledged for access to the growth facilities used in this research.

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Authors and Affiliations

  1. Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA

    Yuda Wang, Parveen Kumar, Leigh Morris Smith & Howard E. Jackson

  2. Department of Physics, Miami University, Oxford, Ohio, USA

    Jan M. Yarrison-Rice

  3. Department of Physics, University of Iowa, Iowa City, Iowa, USA

    Craig Pryor

  4. Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia

    Jung-Hyun Kang, Qiang Gao, Hark Hoe Tan & Chennupati Jagadish

Authors
  1. Yuda Wang
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  2. Parveen Kumar
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  3. Leigh Morris Smith
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  4. Howard E. Jackson
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  5. Jan M. Yarrison-Rice
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  6. Craig Pryor
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  7. Jung-Hyun Kang
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  8. Qiang Gao
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  9. Hark Hoe Tan
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  10. Chennupati Jagadish
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Wang, Y., Kumar, P., Smith, L.M. et al. Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure. MRS Online Proceedings Library 1659, 139–142 (2014). https://doi.org/10.1557/opl.2014.355

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  • DOI: https://doi.org/10.1557/opl.2014.355

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