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Formation of a single In(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

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We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs.

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Acknowledgments

This work is supported by the Special Coordination Funds for Promoting Science and Technology and Funding Program for World-Leading Innovative R&D on Science Technology. The authors would like to acknowledge Dr. T. Ishida, Ms. Y. Takayama and Prof. M. Fujita for TEM analyses of fabricated InAs/GaAs QD-in-NWs.

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Authors and Affiliations

  1. NanoQUINE, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, Japan

    J. Tatebayashi, Y. Ota, D. Karunathillake, S. Ishida, M. Nishioka, S. Iwamoto & Y. Arakawa

  2. Institute of Industrial Science, Univ. of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8505, Japan

    D. Karunathillake, S. Ishida, M. Nishioka, S. Iwamoto & Y. Arakawa

Authors
  1. J. Tatebayashi
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  2. Y. Ota
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  3. D. Karunathillake
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  4. S. Ishida
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  5. M. Nishioka
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  6. S. Iwamoto
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  7. Y. Arakawa
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Correspondence to J. Tatebayashi.

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Tatebayashi, J., Ota, Y., Karunathillake, D. et al. Formation of a single In(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources. MRS Online Proceedings Library 1439, 115–119 (2012). https://doi.org/10.1557/opl.2012.912

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  • DOI: https://doi.org/10.1557/opl.2012.912

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