Growth of aligned wurtzite GaN nanorods on Si(111): Role of Silicon nitride intermediate layer

Abstract

We present here a report on a role of initial nitridation of Si(111) surface on GaN nanorod growth. High quality wurtzite GaN nanorods are grown by Molecular Beam Epitaxy on bare Si(111)-7×7, crystalline and amorphous silicon nitride at 750^oC, under nitrogen rich conditions. Using in-situ reflection high energy electron diffraction and ex-situ X-ray photoelectron spectroscopy, field emission scanning electron microscopy and photoluminescence, the structural and chemical properties are monitored. In the first part of the study, we have optimized the conditions of the N₂* RF plasma, for formation of crystalline and amorphous silicon nitride on Si(111)-7×7 surface. While in the second part, GaN nanorods are grown on clean and these modified Si(111) substrates. Anisotropic spots are observed by RHEED for GaN grown on clean Si and on the amorphous silicon nitride, while circular, sharp and intense RHEED spots have been observed for GaN grown on crystalline Si₃N₄. FESEM results show nanorod growth in all the three different conditions. However, GaN nanorods grown on crystalline Si₃N₄ surface are observed to be self aligned and oriented along <0001> direction, while those grown on amorphous silicon nitride and bare Si(111) surfaces show great disorder increasing, respectively. Overall, the results clearly demonstrate that high quality of dense and self aligned c-oriented GaN nanorods can be formed on Si(111) surface by modifying it by appropriate nitridation.