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Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory

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Abstract

Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.

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Acknowledgement

The authors gratefully acknowledge the support of this work by the NVM project of A*STAR and NUS.

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Authors and Affiliations

  1. NUS Graduate School for Integrative Sciences & Engineering, 28 Medical Drive, Centre for Life Sciences #05-01, Singapore, 117456

    D. Loke

  2. Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore, 117608

    D. Loke, L. P. Shi, W. J. Wang, R. Zhao, L. T. Ng, K. G. Lim & H. X. Yang

  3. Singapore University of Technology & Design, 287 Ghim Moh Road, Singapore, 279623

    T. C. Chong

  4. Department of Electrical & Computer Engineering, National University of Singapore, 1 Engineering Drive 3, Singapore, 117576

    Y. C. Yeo

Authors
  1. D. Loke
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  2. L. P. Shi
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  3. W. J. Wang
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  4. R. Zhao
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  5. L. T. Ng
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  6. K. G. Lim
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  7. H. X. Yang
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  8. T. C. Chong
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  9. Y. C. Yeo
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Correspondence to L. P. Shi.

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Loke, D., Shi, L.P., Wang, W.J. et al. Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory. MRS Online Proceedings Library 1404, 84–89 (2012). https://doi.org/10.1557/opl.2012.482

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  • DOI: https://doi.org/10.1557/opl.2012.482

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