Abstract
Electromigration has gained increased prominence in recent years, as semiconductor device scaling has given way to higher current and power densities in computing interconnects and devices. The conventional understanding of electromigration has remained at an uneasy juncture between the mesoscopic semiclassical and atomistic quantum mechanical regimes. Herein, an “atomistic semiclassical” interpretation of electromigration is presented in an attempt to bridge these two perspectives at the nanoscale.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C. G. Tao, W. G. Cullen, E. D. Williams, Science 328, 736 (2010).
K.-N. Tu, J. Appl. Phys. 94,545 (2003).
S. Datta, Electronic Transport in Mesoscopic System (Cambridge University Press, Cambridge, 1996).
K. H. Bevan, H. Guo, E. D. Williams, and Z. Zhang, Phys. Rev. B 81, 235416 (2010)
S. M. Rossnagel and T. S. Kuan, J.Vac. Sci. Technol. B 22,240 (2004).
A. H. Verbruggen, IBM J. Res. Dev. 32, 93 (1988)
P. Kumar and R. S. Sorbello, Thin Solid Films 25, 25 (1975).
S. Heinze, N.-P. Wang and J. Tersoff, Phys. Rev. Lett. 95, 186802 (2005).
K. H. Bevan, W. Zhu, G. Stocks, H. Guo and Z. Zhang, phys. Rev. B, submitted (2011).
Acknowledgments
K. H. Bevan gratefully acknowledges financial support from NSERC of Canada, as well as insightful discussions with E. D. Williams, Z. Zhang, H. Guo, and S. Datta.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Bevan, K.H. An Atomistic Semiclassical Interpretation of Effective Charge in Electromigration. MRS Online Proceedings Library 1423, 25–29 (2012). https://doi.org/10.1557/opl.2012.230
Published:
Issue Date:
DOI: https://doi.org/10.1557/opl.2012.230