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Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

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Abstract

We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

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Author notes

  1. Masao Nagase

    Present address: The University of Tokushima, 2-1 Minamijosanjima, Tokushima, 770-8506, Japan

Authors and Affiliations

  1. NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan

    Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase & Hiroki Hibino

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  1. Shinichi Tanabe
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  2. Yoshiaki Sekine
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  3. Hiroyuki Kageshima
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  4. Masao Nagase
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  5. Hiroki Hibino
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Tanabe, S., Sekine, Y., Kageshima, H. et al. Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC. MRS Online Proceedings Library 1283, 902 (2010). https://doi.org/10.1557/opl.2011.675

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