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Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

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Abstract

GaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck effect in MOCVD grown Gd-doped GaN (Gd: GaN) are investigated.

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Authors and Affiliations

  1. Department of Optical Science and Engineering, University of North Carolina at Charlotte, NC, 28213, USA

    Bahadir Kucukgok

  2. Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA

    Liqin Su, Elisa N. Hurwitz, Liu Zhiqiang & Ian T. Ferguson

  3. Department of Electrical and Computer Engineering, Georgia Institute of Technology, GA, 30332, USA

    Andrew Melton

  4. Semiconductor Lighting R&D Center Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, Beijing, China

    Liu Zhiqiang

  5. Department of Engineering Technology, Sustainable Material and Renewable Technology (SMART) Laboratory, University of North Carolina at Charlotte, NC, 28213, USA

    Na Lu

Authors
  1. Bahadir Kucukgok
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  2. Liqin Su
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  3. Elisa N. Hurwitz
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  4. Andrew Melton
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  5. Liu Zhiqiang
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  6. Na Lu
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  7. Ian T. Ferguson
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Kucukgok, B., Su, L., Hurwitz, E.N. et al. Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications. MRS Online Proceedings Library 1329, 702 (2011). https://doi.org/10.1557/opl.2011.1236

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  • DOI: https://doi.org/10.1557/opl.2011.1236

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