Abstract
Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.
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Zhao, J.H. Silicon Carbide Power Field-Effect Transistors. MRS Bulletin 30, 293–298 (2005). https://doi.org/10.1557/mrs2005.76
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DOI: https://doi.org/10.1557/mrs2005.76