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Effect of annealing temperature on the electrical characteristics of Ti–Zn–Sn–O thin-film transistors fabricated via a solution process

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Abstract

Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 106. The field-effect mobility (μFE) of 4.1 cm2/Vs and subthreshold swing of 1.2 V/decade were achieved.

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Acknowledgment

This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. 2011-0005119).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Kyungpook National University, Daegu, 702-701, Korea

    Jong Chil Do, Ho Beom Kim & Ho Seong Lee

  2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

    Cheol Hyoun Ahn & Hyung Koun Cho

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  1. Jong Chil Do
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  2. Ho Beom Kim
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Correspondence to Ho Seong Lee.

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Do, J.C., Kim, H.B., Ahn, C.H. et al. Effect of annealing temperature on the electrical characteristics of Ti–Zn–Sn–O thin-film transistors fabricated via a solution process. Journal of Materials Research 27, 2293–2298 (2012). https://doi.org/10.1557/jmr.2012.138

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