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Nanoimprinted complementary organic electronics: Single transistors and inverters

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Abstract

We demonstrate the fabrication of shadow mask (SM) patterned as well as nanoimprint lithography (NIL) patterned organic transistors and integrated complementary organic inverters (ICOIs). As active layers pentacene (p-type) and either PTCDI-C13H27 or F16CuPc (n-type) were used. The SM-patterned ICOIs with a staggered bottom gate configuration, a nanocomposite dielectric and both active layer combinations (pentacene/PTCDI C13H27, pentacene/F16CuPc) exhibited high performance (3 V operation voltage; gain around 60; high level 3 V; low level 5 mV; noise margin 0.9 V). Flexible ICOIs with transistor channel lengths of 900 nm were successfully fabricated by NIL, using a benzocyclobutene derivative as dielectric. Because of the process inherent coplanar bottom gate configuration, F16CuPc was used. The ICOIs showed proper functionality (3 V operation voltage; gain around 5; high level 2.9 V; low level 25 mV). To our knowledge, this study demonstrates the first complementary submicron inverters based on fully R2R compatible imprint processes.

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Acknowledgments

The authors are thankful for financial support from the Nanoinitiative Austria (FFG) since most of this work was done with NILaustria Cluster.

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Authors and Affiliations

  1. Materials—Institute for Surface Technologies and Photonics, Joanneum Research, Forschungsgesellschaft mbH, Weiz, 8160, Austria

    Thomas Rothländer, Ursula Palfinger, Barbara Stadlober, Anja Haase, Herbert Gold, Christian Palfinger, Gerhard Domann, Johanna Kraxner, Georg Jakopic & Paul Hartmann

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  1. Thomas Rothländer
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  2. Ursula Palfinger
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  3. Barbara Stadlober
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  4. Anja Haase
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  5. Herbert Gold
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  6. Christian Palfinger
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  7. Gerhard Domann
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  8. Johanna Kraxner
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  9. Georg Jakopic
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  10. Paul Hartmann
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Correspondence to Thomas Rothländer.

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Rothländer, T., Palfinger, U., Stadlober, B. et al. Nanoimprinted complementary organic electronics: Single transistors and inverters. Journal of Materials Research 26, 2470–2478 (2011). https://doi.org/10.1557/jmr.2011.282

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  • DOI: https://doi.org/10.1557/jmr.2011.282

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