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Crystallization kinetics of Si3N4 in Si−B−C−N polymer-derived ceramics

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Abstract

To study the crystallization kinetics of β-Si3N4 in Si–B–C–N polymer-derived ceramics, the amorphous ceramics with composition SiC1.6N1.0B0.4 were synthesized and then isothermally annealed at 1700, 1775 and 1850 °C. The integrated intensities of β-Si3N4 x-ray diffraction (XRD) patterns were used to examine the course of crystallization. The average size of the Si3N4 nanocrystallites was analyzed by means of the XRD measurements and energy-filtering transmission electron microscopy. It was realized that the nanocrystallite dimensions change insignificantly within the time period of crystallization; however, they depend significantly on the temperature. Subsequently, the kinetics of the β-Si3N4 crystallization was analyzed. Consequently, large activation energy in the range of 11.5 eV was estimated. Moreover, continuous nucleation and diffusion-controlled growth have been concluded as the main mechanisms of the crystallization process. Further analysis points at the crucial role of the nucleation rate in the crystallization kinetics of β-Si3N4.

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Authors and Affiliations

  1. Institute for Materials Science, University of Stuttgart and Max Planck Institute for Metals Research, D-70569, Stuttgart, Germany

    Amir H. Tavakoli, Peter Gerstel, Jerzy A. Golczewski & Joachim Bill

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  1. Amir H. Tavakoli
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  2. Peter Gerstel
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  3. Jerzy A. Golczewski
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  4. Joachim Bill
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Correspondence to Amir H. Tavakoli.

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Tavakoli, A.H., Gerstel, P., Golczewski, J.A. et al. Crystallization kinetics of Si3N4 in Si−B−C−N polymer-derived ceramics. Journal of Materials Research 25, 2150–2158 (2010). https://doi.org/10.1557/jmr.2010.0282

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