Abstract
Piezoresponse mode atomic force microscopy was used to induce a dynamic polarization reversal process and to characterize domain configuration behavior in BaMgF4 single crystal. Triangular reversed domains observed on the polar and non-polar surface demonstrate a sideways domain wall motion mechanism prevailing in the switching process of the bulk BaMgF4 crystal. The domain wall bowing phenomenon due to the strong pinning of the crystal defects was first visualized in the piezoresponse image of the engineering domain pattern in BaMgF4 crystal.
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Zeng, H., Shimamura, K., Villora, E.G. et al. Reversed domain configuration behavior in BaMgF4 ferroelectric crystal. Journal of Materials Research 22, 1072–1076 (2007). https://doi.org/10.1557/jmr.2007.0124
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DOI: https://doi.org/10.1557/jmr.2007.0124