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Effect of Epitaxial Stresses on the Time Dynamics of Photoexcited Charge Carriers in InGaAs–Based Superlattices

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Abstract

We report on the time-resolved measurements of photocarrier dynamics in InGaAs/InAlAs superlattices with epitaxial stresses in a wide range of optical pump fluences. We demonstrated that the contribution of free carrier absorption and two-photon absorption to the carrier dynamics decreases with an increase of epitaxial stresses. The lowest relaxation times of 1.7 and 8.3 ps, respectively attributed to carrier trapping and carrier recombination, were obtained for the structure with maximum epitaxial stresses.

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Authors and Affiliations

  1. MIREA Russian Technological University (RTU MIREA), 78 Vernadsky Ave., Moscow, 119454, Russia

    Arseniy Buryakov, Dinar Khusyainov & Elena Mishina

  2. Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Science, 7/5 Nagornyi proezd, Moscow, 117105, Russia

    Alexandr Yachmenev, Rustam Khabibullin & Dmitriy Ponomarev

  3. Prokhorov General Physics Institute of the Russian Academy of Science, Moscow, 119991, Russia

    Alexandr Yachmenev, Rustam Khabibullin & Dmitriy Ponomarev

Authors
  1. Arseniy Buryakov
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  2. Dinar Khusyainov
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  3. Elena Mishina
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  4. Alexandr Yachmenev
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  5. Rustam Khabibullin
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  6. Dmitriy Ponomarev
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Buryakov, A., Khusyainov, D., Mishina, E. et al. Effect of Epitaxial Stresses on the Time Dynamics of Photoexcited Charge Carriers in InGaAs–Based Superlattices. MRS Advances 4, 15–20 (2019). https://doi.org/10.1557/adv.2019.163

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