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Impact of Divalent Metal Additives on the Structural and Optoelectronic Properties of CH3NH3PbI3 Perovskite Prepared by the Two-Step Solution Process

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Abstract

Here, we investigate the effect of divalent metal (Zn2+, Cd2+ and Hg2+) on the structural and optoelectronic properties of methylammonium lead iodide perovskite materials prepared by the two-step deposition process. The incorporation of Cd2+ significantly improved the grain size, crystallinity, and charge carrier lifetime of CH3NH3PbI3. The inclusion of Hg2+ and Zn2+ improved the grain size compare to the control sample but adversely affected the optoelectronic properties of perovskite films. The Hg- and Zn-based impurities were formed on the surface of the films, which increased the charge trap density and lead to high non-radiative recombination rate. Time resolved photoluminescence measurements indicated that the Cd and Zn point defects do not create deep-level trap states, but the Zn-modified film showed a low lifetime due to morphology changes in the film and particle segregation on the surface.

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Watthage, S.C., Song, Z., Shrestha, N. et al. Impact of Divalent Metal Additives on the Structural and Optoelectronic Properties of CH3NH3PbI3 Perovskite Prepared by the Two-Step Solution Process. MRS Advances 2, 1183–1188 (2017). https://doi.org/10.1557/adv.2017.47

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  • DOI: https://doi.org/10.1557/adv.2017.47

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