Abstract
In this work, temperature-dependent optical properties of a series of AlN thin films with different thickness are studied by spectroscopic ellipsometry (SE) ranging from 300 to 825K. The fitted refractive index at 300K is in good agreement with the reported by others, which confirms the high accuracy of the optical model used in this work. The degradation of the absorption properties and the decrease of the bandgap become more pronounced with temperature increases above 475K. A larger change of bandgap at elevated temperature is observed for the thinner AlN epi-layer (300nm) than the thicker ones (404nm). This can be attributed to the poor surface morphologies and crystal qualities in the thinner AlN epi-layer.
References
N. Lu and I. Ferguson, Semiconductor Science and Technology 28, 074023 (2013).
P. Motamedi and K. Cadien, Journal of Crystal Growth 421, 45–52 (2015).
K. Tsubouchi and N. Mikoshiba, IEEE Trans. Sonics Ultrason. 32, 634–644 (1985).
M. Clement, L. Vergara, J. Sangrador, E. Iborra and A. Sanz-Hervás, Ultrasonics 42, 403– 407 (2004).
T. Aubert, O. Elmazria, B. Assouar, E. Blampain, A. Hamdan, D. Genève, and S. Weber, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 59, 999–1005 (2012).
T. Aubert, O. Elmazria, B. Assouar, L. Bouvot, and M. Oudich, Appl. Phys. Lett. 96, 203503 (2010).
N. Watanabe, T. Kimoto, and J. Suda, J. Appl. Phys. 104, 106101 (2008).
S. Sohal, W. Feng, M. Pandikunta, V. V. Kuryatkov, S. A. Nikishin, and M. Holtz, Journal of Applied Physics 113, 043501 (2013).
H. He, L. Huang, Y. Zhang, Y. Fu, X. Shen, and J. Zeng, Vacuum 100, 33–35 (2014).
K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 85, 3489–3491 (2004).
H. Fujiwara, Spectroscopic Ellipsometry Principles and Applications, 1rd ed. (John Wiley & Sons, Ltd, England, (2007) p. 136.
M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, and D. J. As, J. Appl. Phys. 106, 076104 (2009).
M. Feneberg, M. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn, Thin Solid Films 571, 503–506 (2014).
G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, N. Esser, C. Cobet, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, R. Goldhahn, Phys. Rev. B 83, 195202 (2011).
S. Liu, X. Chen, C. Zhang, Thin Solid Films 584, 176–185 (2015).
N.S. Das, P.K. Ghosh, M.K. Mitra, K.K. Chattopadhyay, Phys. E Low-Dimens. Syst. Nanostruct. 42, 2097–2102 (2010).
N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies, J. Appl. Phys. 93, 5222–5226 (2003).
Temperature dependence of the energy bandgap. Available at: http://ecee.colorado.edu/~bart/book/eband5.htm/~bart/book/eband5.htm (accessed 23/10/2016).
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Liu, Y., Ghafari, E., Jiang, X. et al. Temperature-dependent Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry. MRS Advances 2, 323–328 (2017). https://doi.org/10.1557/adv.2017.171
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DOI: https://doi.org/10.1557/adv.2017.171