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Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°

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Abstract

The drift mobility μ d and the mobility-lifetime product μτ in undoped a-Si:H have been studied up to 130°C. The electron μ de is temperature-activated with Eae = 0.13 to 0.16 eV. The electron (μτ)e increases with temperature T. For hole transport, we observe the transition from dispersive to non-dispersive transport with increasing T. The hole μ dh is ∼ 1/100 of μ de, and is activated with Eah = 0.34 to 0.48eV. The hole (μτ)h does not change much with T. A computer simulation demonstrates the high sensitivity of μ d to the band tail width.

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Shen, D.S., Aljishi, S., Smith, Z.E. et al. Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°. MRS Online Proceedings Library 95, 95–100 (1987). https://doi.org/10.1557/PROC-95-95

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  • DOI: https://doi.org/10.1557/PROC-95-95

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