Abstract
Transient photoconductivity measurements in a-Si:H at different n- and p-doping level point to decay kinetics which strongly depend on the doping level and excitation densities. In undoped a-Si:H excess charge carriers decay mainly by a transition between electrons and holes at their respective mobility edges. The generation of hole traps by n-doping quenches this decay channel and transitions between localized states in the bandgap play an important role in charge carrier kinetics. In p-doped material the availability of a large density of mobile holes and positively charged recombination centers increases the electron decay drastically.
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Werner, A., Kunst, M. Charge Carrier Recombination in Doped a-Si:H Studied by Contactless Photoconductivity Measurements. MRS Online Proceedings Library 95, 119–123 (1987). https://doi.org/10.1557/PROC-95-119
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DOI: https://doi.org/10.1557/PROC-95-119