Abstract
Ion mixing experiments using Xe ions at temperatures ranging from 77K to about 450K were conducted on Al/Ni and Al/Pt couples. Evaporated polycrystalline Al films and large-grained Al crystals were used as substrates. Xenon irradiation of Al/Pt bilayers achieves considerable intermixing and a temperature dependence is observed. Only moderate interfacial mixing with little temperature dependence is observed in Al/Ni bilayers. The mixing efficiency of Al/Ni is consistent with the phenomenological model of thermal spike mixing, and so is the absence of a pronounced temperature dependence below 450K. No significant difference is noted in ion mixing of evaporated and large-grained Al substrates. In contrast to ion mixing, Al/Pt and Al/Ni samples behave similarly upon thermal annealing and form well-defined compounds. The results are also compared with Si/metal systems, where silicides can be formed readily by low temperature thermal annealing as well as by ion mixing of bilayer samples.
Similar content being viewed by others
References
S. Matteson and M-A. Nicolet, Ann. Rev. Mater. Sci. 13, 339 (1983).
M. Nastasi, L.S. Hung, and J.W. Mayer, Appl. Phys. Lett. 43, 831 (1983).
J.W. Mayer, B.Y. Tsaur, S.S. Lau, and L.S. Hung, Nucl. Instr. Meth. 182/183, 1 (1983).
R.S. Averback, L.J. Thompson, Jr., J. Moyle and M. Schalit, J. Appl. Phys. 53 (3), 1342. (1982).
X.-A. Zhao, T. Banwell and M-A.Nicolet, presented at the SPIE Conference, SPIE Vol. 623, 255 (1986).
Y.T. Cheng, T.W. Workman, W.L. Johnson and M-A. Nicolet, presented at MRS Fall meeting, Boston, Dec. 1986, to appear in MRS Symp. Proc. (in press)
The Al substrates in these experiments were polished single crystals; no attempt was made to remove the native oxide before the transition metals were deposited on them.
A.T. Peacock and G. Dearnaley, Proceedings of the 2nd Workshop on Ion Mixing and Surface layer Alloying, eds. D. M. Follstaedt, R. S. Averback and M-A. Nicolet, Pasadena, CA, USA, January 1986.
W.L. Johnson. Y.T. Cheng, M. van Rossum, and M-A. Nicolet, Nucl. Instr. Meth. B7/8, 657 (1985).
Y.T. Cheng, X.-A. Zhao, T. Banwell, T. Workman, M-A. Nicolet, and W.L. Johnson, J. Appl. Phys. 60, 2515 (1986).
Heat of mixing calculated for an A50B50 compound, A.R. Miedema, Philips Tech. Review 8, 217 (1976).
Cohesive energy for A50B50 calculated from ΔH =1/2(ΔHOA+ΔHoB)+ΔH, where ΔHOA andAHOB are the cohesive energies of the corresponding elemental solids A ana B, obtained from C. Kittel, Introduction to Solid State Physics, 5th ed. (Wiley, NY, 1976), p. 75.
X.-A. Zhao, E. Ma and M-A. Nicolet, Materials Lett, (in press).
X-A. Zhao, E. Ma, H.-Y. Yang and M-A. Nicolet, presented at the Inter. Conf. on Metallur. Coatings, San Diego, March 1987, to appear in Thin Solid Films.
X.-A. Zhao, H.-Y. Yang, E. Ma and M-A. Nicolet, J. Appl. Phys. (submitted).
B.Y. Tsaur, Z.L. Liau, and J.W. Mayer, Appl. Phys. Lett. 34, 168 (1979).
B.L. Sharma, Diffusion in Semiconductors, Trans. Tech. Publications (Clausthal-Zellerfeld) 1970.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ma, E., Zhao, XA. & Nicolet, M.A. Ion Mixing of Near-Noble Transition Metal Films on Evaporated and Large-Grained Aluminum Substrates. MRS Online Proceedings Library 93, 221–226 (1987). https://doi.org/10.1557/PROC-93-221
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-93-221