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Raman Scattering from Rapid Thermally Annealed Tungsten Silicide

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Abstract

Raman Scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films were formed by rapid thermally annealing tungsten films that were sputter deposited on silicon substrates. The Raman scattering data is correlated with data from resistivity measurements, Auger and Rutherford Backscattering measurements, and scanning electron microscopy.

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References

  1. S.P. Murarka, Silicides for VLSI Applications (Academic, New York, 1985).

    Google Scholar 

  2. T.P. Chow and A.J. Steckl, IEEE Trans, on Electron Devices, ED-80, 1480 (1983).

    Article  CAS  Google Scholar 

  3. F. Mohammadi and K.C. Saraswat, J. Electrochem. Soc. 127, 450 (1980).

    Article  CAS  Google Scholar 

  4. K.C. Saraswat, D.L. Bross, J.A. Fair, K.A. Monnig and R. Byers, IEEE Trans. on Electron Devices, ED-30, 1497 (1983).

    Article  CAS  Google Scholar 

  5. R.J. Miller, Thin Solid Films 72, 427 (1980).

    Article  CAS  Google Scholar 

  6. L.N. Lie, W.A. Tiller and K.C. Saraswat, J. of Appl. Phys. 56, 2127 (1984).

    Article  CAS  Google Scholar 

  7. P.J. Codellla, F. Adar and Y.S. Liu, Appl. Phys. Lett. 46, 1076 (1985).

    Article  Google Scholar 

  8. R.J. Nemanich, R.T. Fulks, B.L. Stafford and H.A. Vander Plas, Appl. Phys. Lett. 46, 670 (1985).

    Article  CAS  Google Scholar 

  9. R.J. Nemanich, C.C. Tsai, B.L. Stafford, J.R. Abelson and T.W. Sigmon, Materials Research Society Symposium Proceedings 25, 9 (1983).

    Article  Google Scholar 

  10. Y. Du, Z. Lu, Z. Yu, D. Sun, F. Li and G.J. Collins, Chinese Physics 6, No. 1, 208 (1986).

    Google Scholar 

  11. S. Kumar, J.T. Boyd and H.E. Jackson, unpublished.

  12. B.Z. Li and R.G. Aitken, Appl. Phys. Lett. 46, 401 (1985).

    Article  CAS  Google Scholar 

  13. J. Kato, M. Asahina, H. Shimura and Y. Yamamoto, J. Electrochem. Soc. 133, 794 (1986).

    Article  CAS  Google Scholar 

  14. B.Y. Tsaur, C.K. Chen, C.H. Anderson, Jr. and D.L. Kwong, J. Appl. Phys. 57, 1890 (1985).

    Article  CAS  Google Scholar 

Download references

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Author notes

  1. Samhita Dasgupta

    Present address: Dept. of Elec. Engg Comp. Sc., University of California, San Diego, La Jolla, CA, 92093, USA

Authors and Affiliations

  1. Dept. of Physics, University of Cincinnati, Cincinnati, Ohio, 45221, USA

    Samhita Dasgupta & Howard E. Jackson

  2. Microelectronics Device Research Laboratory, Dept. of Elec. & Comp. Engg, University of Cincinnati, Cincinnati, Ohio, 45221, USA

    Sandeep Kumar & Joseph T. Boyd

Authors
  1. Samhita Dasgupta
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  2. Sandeep Kumar
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  3. Howard E. Jackson
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  4. Joseph T. Boyd
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Dasgupta, S., Kumar, S., Jackson, H.E. et al. Raman Scattering from Rapid Thermally Annealed Tungsten Silicide. MRS Online Proceedings Library 92, 213–217 (1987). https://doi.org/10.1557/PROC-92-213

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  • DOI: https://doi.org/10.1557/PROC-92-213

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