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Improved MOCVD Growth of GaAs on Si

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Abstract

In the direct growth of GaAs on Si by MOCVD the overall quality of the heteroepitaxial film is controlled to a large extent by the growth parameters of the initial GaAs buffer layer. We have investigated the structural properties of this layer using Rutherford Backscattering Spectrometry (RBS) and X-ray double crystal diffractometry. The crystallinity of the buffer layer was observed to improve with increasing layer thickness in the range 10–100nm, and then to rapidly degrade for thicker layers. High temperature (750°C) annealing of the buffer layers resulted in considerable reordering of all but the thicker (>200 nm) layers. Alteration of the usual GaAs/Si growth sequence to include an in-situ anneal of the buffer layer after growth interruption yielded GaAs films with improved structural, optical and electrical properties.

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References

  1. M. Akiyama, Y. Kawarada and K. Kaminishi, Jpn. J. Appl. Phys. 23, L843 (1984).

  2. R.M. Lum, J.K. Klingert and B.V. Dutt, J. Cryst. Growth 75, 421 (1986).

    Article  CAS  Google Scholar 

  3. P.B. Hirsch, Progress in Metal Physics, edited by B. Chalmers and R. King (Pergamon, New York, N.Y., 21956), Chap. 6.

  4. R. Hull and A. Fischer-Colbrie, Appl. Phys. Lett. 50, 851 (1987).

    Article  CAS  Google Scholar 

  5. N. Chand, R. People, F.A. Baiocchi, K.W. Wecht and A.Y. Cho, Appl. Phys. Lett. 49, 815 (1986).

    Article  CAS  Google Scholar 

  6. J.W. Lee, H. Shichijo, H.L. Tsai and R.J. Matyi, Appl. Phys. Lett. 50, 31 (1987).

    Article  CAS  Google Scholar 

  7. S. Zemon, S.K. Shastry, P. Norris, C. Jagnnath and G. Lambert, Solid State Coram. 58, 457 (1986).

    Article  CAS  Google Scholar 

  8. T.D. Harris and M.G. Lamont, private communication.

  9. A.T. Macrander, S.N.G. Chu, K.E. Strege, A.F. Bloemeke and W.D. Johnston, Jr., Appl. Phys. Lett. 44, 615 (1984).

    Article  CAS  Google Scholar 

  10. A.R. Hutson, J. Appl. 60, 1038 (1986).

    Article  CAS  Google Scholar 

  11. J.W. Lee, in Heteroepitaxy on Silicon, edited by J.C.C. Fan and J.M. Poate (Materials Research Society, Pittsburgh, PA, 1986), p. 29.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 07733, Holmdel, N.J., USA

    R. M. Lum & J. K. Klingert

  2. AT&T Bell Laboratories, 07974, Murray Hill, N.J., USA

    B. A. Davidson & M. G. Lamont

Authors
  1. R. M. Lum
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  2. J. K. Klingert
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  3. B. A. Davidson
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  4. M. G. Lamont
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Lum, R.M., Klingert, J.K., Davidson, B.A. et al. Improved MOCVD Growth of GaAs on Si. MRS Online Proceedings Library 91, 125–130 (1987). https://doi.org/10.1557/PROC-91-125

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  • DOI: https://doi.org/10.1557/PROC-91-125

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