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Deep Level Defects in CdTe

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Abstract

We have used two complementary techniques to study deep trapping levels in CdTe single crystals. Samples of undoped, semi-insulating material and p-type material doped with phosphorus or cesium have been examined using transient spectroscopic techniques. Both capacitance transients (DLTS) and photocurrent transients (PITS) have been measured. The DLTS measurements showed several trapping levels in all of the specimens, while the PITS data usually revealed only a single level.

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Authors and Affiliations

  1. Oregon Graduate Center, 19600 NW Von Neumann Dr., 97006, Beaverton, OR, USA

    V. B. Leigh & R. E. Kremer

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  1. V. B. Leigh
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  2. R. E. Kremer
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Leigh, V.B., Kremer, R.E. Deep Level Defects in CdTe. MRS Online Proceedings Library 90, 241 (1986). https://doi.org/10.1557/PROC-90-241

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  • DOI: https://doi.org/10.1557/PROC-90-241

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