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Characterization of Ti/TiN and TiN Conductive Layer for High Temperature MEMS Devices

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Abstract

The effects of temperature on micro heaters made of Ti/TiN stacks and pure TiN layers on bulk micromachined membranes have been studied. Ti/TiN stacks show a thermal stability up to 380°C, beyond that temperature an enhanced interaction within the stack and/or with adjacend layers leads to a degradation of the resistance. The pure TiN layers withstand temperatures up to 600 °C, this limitation is only given by the mechanical stability of the membran stack, which is destroyed beyond this temperature. These layers are suitable for sensors in which an elevated temperature provided by heating lines on a membran for thermal isolation and fast response is necessary for functionality.

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Authors and Affiliations

  1. Fraunhofer Institut fuer Siliziumtechnologie, Fraunhofer Str.1, 25524, Itzehoe, Germany

    Peter Lange, Sebastian Puls & Joerg Syre

  2. FH Westkueste, Fritz-Thiedemann-Ring 20, 25746, Heide, Germany

    Birger Ohlsen

Authors
  1. Peter Lange
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  2. Birger Ohlsen
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  3. Sebastian Puls
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  4. Joerg Syre
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Lange, P., Ohlsen, B., Puls, S. et al. Characterization of Ti/TiN and TiN Conductive Layer for High Temperature MEMS Devices. MRS Online Proceedings Library 872, 42 (2005). https://doi.org/10.1557/PROC-872-J4.2

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  • DOI: https://doi.org/10.1557/PROC-872-J4.2

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