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The Band Offsets of Isomeric Boron Carbide Overlayers

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Abstract

Semiconducting boron carbide overlayers, formed from the decomposition of orthocarborane and metacarborane have been studied by angle resolved photoemission. The incurrence of surface photovoltage and the photovoltaic process, from the photoemission experiment, reveal band offsets in the orthocarborane multilayer configurations that are invereted relative to single layer configurations. Defect induced gap states which trap charge at the heterostructure interface is used as one explanation of these results. The role of defects is also used to help illuminate why opposite semiconducting type materials are formed from the decomposition of isomer carborane molecules.

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Acknowledgments

This research was supported by the National Science Foundation through grants #ECS-0300018, and #EPS-0091909, the Nebraska Research Initiative and the U.S. Department of Energy National Nuclear Security Administration Office of Nonproliferation Research and Engineering (NA-22) through Pacific Northwest National Laboratory. The authors wish to thank S. Balaz for help with some of the measurements.

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Authors and Affiliations

  1. Department of Physics & Astronomy and the Center for Materials Research, Analysis (CMRA) Behlen Laboratory of Physics University of Nebraska, Lincoln, NE, 68588–0111, USA

    A. N. Caruso & P. Lunca-Popa

  2. Center for Advanced Microstructures and Devices (CAMD), Louisiana State University, Baton Rouge, LA, 70806, USA

    Y. B. Losovyj

  3. Department of Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0511, USA

    P. Lunca-Popa, A. S. Gunn & J. I. Brand

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  1. A. N. Caruso
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  2. P. Lunca-Popa
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  3. Y. B. Losovyj
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  4. A. S. Gunn
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  5. J. I. Brand
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Caruso, A.N., Lunca-Popa, P., Losovyj, Y.B. et al. The Band Offsets of Isomeric Boron Carbide Overlayers. MRS Online Proceedings Library 836, L5.40 (2004). https://doi.org/10.1557/PROC-836-L5.40

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  • DOI: https://doi.org/10.1557/PROC-836-L5.40

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