Abstract
We have fabricated a series of a-SiNx/nc-Si/a-SiNx double-barrier structural samples by plasma-enhanced chemical vapor deposition (PECVD) and subsequent thermal annealing technique. The micro-structural properties of the samples were studied by using Raman scattering spectroscopy, planar and cross-section transmission electron microscopy (TEM). The electrical properties of the samples were investigated by frequency dependence of capacitance voltage (C-V) measurements. Charging effect in the nc-Si was exhibited through the hysteresis phenomena of the C-V curve and explained by F-N tunneling. For the thicker SiNx barrier layer samples, Coulomb blockade effect was observed in C-V curve for the sample with thinner SiNxbarrier layer, in which two capacitance peaks appeared, and explained by direct tunneling of electrons into the nc-Si through the tunneling SiNx layers. From the interval between the two peaks, the Coulomb charging energy of nc-Si dot was estimated.
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Acknowledgments
The authors would like to acknowledge the supports of State Key Program for Basic Research of China (Grant No.2001CB610503), the National Nature Science Foundation of China (Grant No.90101020, 90301009, and 60471021).
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Wu, L.C., Dai, M., Huang, X.F. et al. Structural characterization and Coulomb blockade of a-SiNx/ nanocrystalline Si /a-SiNx asymmetric double-barrier structures. MRS Online Proceedings Library 832, 7–11 (2004). https://doi.org/10.1557/PROC-832-F3.6
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DOI: https://doi.org/10.1557/PROC-832-F3.6