Abstract
InGaN/GaN multiple quantum wells (MQWs) with [0001], <11.2>, and <11.0> orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional c-oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.
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Acknowledgments
The authors are grateful to JEOL Ltd. for the STEM and EDS observations. They are also grateful to Mrs. T. Ishibashi and K. Kojima at Kyoto University for variable comments and discussions. A part of this work was performed using the facility at the Venture Business Laboratory in Kyoto University (KU–VBL). This work is partially supported by the 21st Century COE Program (No. 14213201) and Grants for Regional Science and Technology Promotion from the Ministry of Education, Culture, Sports, Science, and Technology.
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Funato, M., Nishizuka, K., Kawakami, Y. et al. Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells. MRS Online Proceedings Library 831, 540–545 (2004). https://doi.org/10.1557/PROC-831-E5.5
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DOI: https://doi.org/10.1557/PROC-831-E5.5