Skip to main content
Log in

Characterization and Manipulation of Exposed Ge Nanocrystals

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Isotopically pure 70Ge and 74Ge nanocrystals embedded in SiO2 thin films on Si substrates have been fabricated through ion implantation and thermal annealing. Nanocrystals were subsequently exposed using a hydrofluoric acid etching procedure to selectively remove the oxide matrix while retaining up to 69% of the implanted Ge. Comparison of transmission electron micrographs (TEM) of as-grown crystals to atomic force microscope (AFM) data of exposed crystals reveals that the nanocrystal size distribution is very nearly preserved during etching. Therefore, this process provides a new means to use AFM for rapid and straightforward determination of size distributions of nanocrystals formed in a silica matrix. Once exposed, nanocrystals may be transferred to a variety of substrates, such as conducting metal films and optically transparent insulators for further characterization.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. S. Tiwari et al., Appl. Phys. Lett. 69, 1232 (1996).

    Article  CAS  Google Scholar 

  2. S. Decossas et al., Nanotechnology 14, 1272 (2003).

    Article  CAS  Google Scholar 

  3. I. H. Campbell and P. M. Fauchet, Solid State Commun. 58, 739 (1986).

    Article  CAS  Google Scholar 

  4. M. Yamamoto et al., Thin Solid Films 369, 100 (2000).

    Article  CAS  Google Scholar 

  5. H. C. Hamaker, Physica 4, 1058 (1937).

    Article  CAS  Google Scholar 

  6. J. N. Israelachvili, Intermolecular and Surface Forces. (Academic Press, London, 1985).

    Google Scholar 

  7. H. Richter, Z. P. Wang and B. Ley, Solid State Commun. 39, 625 (1981).

    Article  CAS  Google Scholar 

  8. F. Cerdeira et al., Phys. Rev. B 5, 580 (1972).

    Article  Google Scholar 

  9. D. O. Yi et al., MRS Spring Meeting, Symposium P, (San Francisco, 2004).

    Google Scholar 

  10. M. Fujii, S. Hayashi and K. Yamamoto, Jpn. J. Appl. Phys. 30, 687 (1991).

    Article  CAS  Google Scholar 

  11. A. G. Rolo et al., Thin Solid Films 336, 58 (1998).

    Article  CAS  Google Scholar 

  12. W. Cheng, S.-F. Ren and P. Y. Yu, Phys. Rev. B 68, 193309 (2003).

    Article  Google Scholar 

  13. H. I. Liu et al., Appl. Phys. Lett. 64, 1383 (1994).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

I.D.S. acknowledges support from the Intel Robert N. Noyce fellowship. D.O.Y. acknowledges support from the U.C. Berkeley and Luce Foundation Fellowships. Q.X. acknowledges support through a U.C. Berkeley Fellowship. D.C.C. and E.E.H. acknowledge support by the Miller Institute for Basic Research in Science. This work is supported in part by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering, of the U.S. Department of Energy under contract No. DE-AC03-76F00098 and in part by U.S. NSF Grant Nos. DMR-0109844 and EEC-0085569.

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Sharp, I., Xu, Q., Liao, C. et al. Characterization and Manipulation of Exposed Ge Nanocrystals. MRS Online Proceedings Library 818, 1–6 (2004). https://doi.org/10.1557/PROC-818-M13.3.1

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-818-M13.3.1

Navigation